• Part: SGN2731-130H-R
  • Description: GaN HEMT
  • Manufacturer: SUMITOMO
  • Size: 235.26 KB
Download SGN2731-130H-R Datasheet PDF
SUMITOMO
SGN2731-130H-R
SGN2731-130H-R is GaN HEMT manufactured by SUMITOMO.
FEATURES - High Power : 160W (typ.) @ Pin=6.3W (38d Bm) - High Efficiency : 62% (typ.) @ Pin=6.3W (38d Bm) - Broad Band : 2.7 to 3.1 GHz - Impedance Matched Zin/Zout = 50 ohm Ga N HEMT for S-band Radar DESCRIPTION Sumitomo Ga N-HEMT SGN2731-130H-R offers high power, high efficiency and greater consistency for S-band radar applications with 50V operation. The low thermal resistance allows to use long pulse up to 5 msec pulse width with duty of 10%. Ro HS PLIANCE Yes ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 deg.C) Item Symbol Condition Rating Operating Voltage Drain-Source Voltage VGS=-10V Gate-Source Voltage - 15 Storage Temperature Tstg -55 to +125 Channel Temperature Tch Unit V V V deg.C deg.C REMENDED OPERATING CONDITION Item Symbol Condition DC Input Voltage Forward Gate Current Reverse Gate Current RG=12...