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SSF65R190S2 - 650V N-Channel Super-Junction MOSFET

Download the SSF65R190S2 datasheet PDF. This datasheet also covers the SSF65R190S2-SUPER variant, as both devices belong to the same 650v n-channel super-junction mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • Multi-Epi process SJ-FET.
  • 700V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.16Ω.
  • Ultra Low Gate Charge (typ. Qg = 36.5nC).
  • 100% avalanche tested SSF65R190S2 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage EAS IAS dv/dt Single Pulsed Avalanche Energy (Note 2) Avalanche current, repetitive or not-repetitive (pul.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF65R190S2-SUPER-SEMI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF65R190S2
Manufacturer SUPER-SEMI
File Size 704.19 KB
Description 650V N-Channel Super-Junction MOSFET
Datasheet download datasheet SSF65R190S2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 Aug. 2022 www.supersemi.com.cn SSF65R190S2 650V N-Channel Super-Junction MOSFET Gen-Ⅱ SSF65R190S2 650V N-Channel Super-Junction MOSFET Gen-Ⅱ Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.