Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Features
- Multi-Epi process SJ-FET.
- Fast-Recovery body diode.
- Extremely Low Reverse Recovery Charge.
- 700V @TJ = 150 ℃.
- Typ. RDS(on) = 0.175Ω.
- Ultra Low Gate Charge (typ. Qg = 36.5nC).
- 100% avalanche tested
SSF65R190SFD
SSP65R190SFD
SSW65R190SFD
TO-247
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM VGSS
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Sou.
SSF65R190SFD Datasheet
