Datasheet Details
| Part number | SSF65R190SFD |
|---|---|
| Manufacturer | Super Semiconductor |
| File Size | 1.00 MB |
| Description | 650V N-Channel Super-Junction MOSFET |
| Datasheet |
 SSF65R190SFD Datasheet
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General Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Key Features
- Multi-Epi process SJ-FET.
- Fast-Recovery body diode.
- Extremely Low Reverse Recovery Charge.
- 700V @TJ = 150 ℃.
- Typ. RDS(on) = 0.175Ω.
- Ultra Low Gate Charge (typ. Qg = 36.5nC).
- 100% avalanche tested SSF65R190SFD SSP65R190SFD SSW65R190SFD TO-247 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Sou.