SMP730 Datasheet | SY Semiconductors

Features - 6A,400V, RDS(on) =1.0 Ω@VGS=10V - Low gate charge ( typical 13 n C) - Low Crss ( typical 7p F) - 100% avalanche tested - Fast switching - Improved dv/dt capability Application - Electronic Ballast - Active power factor correction - Switching mode power supply 400V N-Channel Power MOSFET Absolute Maximum Ratings(Tc=25°C unless otherwise noted) Symbol VDSS VGS Tj TSTG EAS IAR Drain-source Voltage Gate-source Voltage Parameters Continuous Drain Current Drain Current-Pulsed ① Power Dissipation Junction Temperature Storage Temperature Single Pulse Avalanche Energy② Avalanche Current① --TC=25°C --TC=100°C --(TC = 25°C) -- Derate above 25°C Value 400 ±30 6 3.6 24 75 0.6 150 -55-150 280 7.5 Thermal Characteristics Symbol Parameters RθJC Thermal Resistance Junction-case Min Typ Max 1.05 RθJA Thermal Resistance Junction-ambient Unit V V A A A W W/°C °C °C m J...