SPC4516B Description
The SPC4516B is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits...
SPC4516B Key Features
- N-Channel
- P-Channel -30V/-8.2A,RDS(ON)=24mΩ@VGS=-10V -30V/-7.26A,RDS(ON)=30mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- SOP-8 package design
SPC4516B Applications
- Power Management in Note book