SPC4606 Overview
Description
The SPC4606 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
Key Features
- N-Channel 30V/4.0A,RDS(ON)=40mΩ@VGS=10V 30V/3.6A,RDS(ON)=50mΩ@VGS=4.5V
- P-Channel -30V/-4.0A,RDS(ON)=70mΩ@VGS=-10V -30V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- PPAK3x2–8L package design
