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SPC5604 - N & P Pair Enhancement Mode MOSFET

General Description

The SPC5604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • N-Channel 40V/10A,RDS(ON)= 24mΩ@VGS= 10V 40V/ 8A,RDS(ON)= 28mΩ@VGS= 4.5V 40V/ 6A,RDS(ON)= 32mΩ@VGS= 2.5V P-Channel -40V/-10A,RDS(ON)= 32mΩ@VGS=- 10V -40V/- 8A,RDS(ON)= 42mΩ@VGS=- 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252-5L package design.

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Datasheet Details

Part number SPC5604
Manufacturer SYNC POWER
File Size 513.11 KB
Description N & P Pair Enhancement Mode MOSFET
Datasheet download datasheet SPC5604 Datasheet

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Full PDF Text Transcription (Reference)

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SPC5604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC5604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. FEATURES N-Channel 40V/10A,RDS(ON)= 24mΩ@VGS= 10V 40V/ 8A,RDS(ON)= 28mΩ@VGS= 4.5V 40V/ 6A,RDS(ON)= 32mΩ@VGS= 2.5V P-Channel -40V/-10A,RDS(ON)= 32mΩ@VGS=- 10V -40V/- 8A,RDS(ON)= 42mΩ@VGS=- 4.