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SPN09T10 - N-Channel MOSFET

General Description

The SPN09T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Powered System DC/DC Converter Load Switch has been designed specifically to improve the overall e

Key Features

  • 100V/8A,RDS(ON)=160mΩ@ VGS=10V.
  • High density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L package design TO-252-2L PIN.

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Datasheet Details

Part number SPN09T10
Manufacturer SYNC POWER
File Size 378.91 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN09T10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN09T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN09T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN09T10 APPLICATIONS  Powered System  DC/DC Converter  Load Switch has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. FEATURES  100V/8A,RDS(ON)=160mΩ@ VGS=10V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L package design TO-252-2L PIN CONFIGURATION PART MARKING 2020/04/30 Ver.