SPN120T20 Description
The SPN120T20 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
SPN120T20 Key Features
- 200V/132A, RDS(ON)=11mΩ@VGS=10V
- High density cell design for extremely low RDS
- Exceptional on-resistance and maximum DC current
- TO-220-3L/TO-220F-3L/TO-263-2L package design