SPN12T20 - N-Channel MOSFET

SYNC POWER

General Description

The SPN12T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Key Features

200V/9A,RDS(ON)=210mΩ@VGS=10V.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
TO-252-2L package design PIN.

📥 Download Datasheet

SPN12T20 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN12T20
Manufacturer	SYNC POWER
File Size	448.77 KB
Description	N-Channel MOSFET
Datasheet	SPN12T20 Datasheet

Other Datasheets by SYNC POWER

Part Number	Description
SPN120T06	N-Channel MOSFET
SPN120T15	N-Channel MOSFET
SPN120T20	N-Channel MOSFET
SPN125N04A	N-Channel Enhancement Mode MOSFET
SPN125T04	N-Channel MOSFET
SPN125T06	N-Channel MOSFET
SPN125T10	N-Channel MOSFET
SPN100T12	N-Channel MOSFET
SPN1012	N-Channel MOSFET
SPN1014	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SPN12T20 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN12T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN12T20 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Small Power Switching for MB/NB/VGA  Network DC/DC Power System  Load Switch FEATURES  200V/9A,RDS(ON)=210mΩ@VGS=10V  High density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L package design PIN CONFIGURATION TO-252-2L 2020/09/21 Ver.