SPN1308W Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1308W is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter Features - N-Channel 30V/1.4A,RDS(ON)=190mΩ@VGS=10V 30V/1.0A,RDS(ON)=200mΩ@VGS=4.5V 30V/0.5A,RDS(ON)=250mΩ@VGS=2.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - ESD protected - SOT-323 package design PIN CONFIGURATION( SOT-323 ) PART MARKING 2021/10/01 Ver 1 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN1308WS32RGB SOT-323...