SPN138N08 Description
The SPN138N08 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
SPN138N08 Key Features
- 80V/138A,RDS(ON)=3.6mΩ@VGS=10V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- PPAK5x6-8L package design