SPN166N06 Description
The SPN166N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
SPN166N06 Key Features
- 60V/166A,RDS(ON)=3.1mΩ@VGS=10V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC current
- TO-220-3L/TO-252-2L/PPAK5x6-8L/ TOLL-8