SPN166N06 Datasheet | SYNC POWER

DESCRIPTION The SPN166N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS - DC/DC Converter - Load Switch - SMPS Secondary Side Synchronous Rectifier - Motor Control - Power Tool FEATURES - 60V/166A,RDS(ON)=3.1mΩ@VGS=10V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - TO-220-3L/TO-252-2L/PPAK5x6-8L/ TOLL-8 package design PIN CONFIGURATION TO-220 TO-220F TO252 PPAK5x6 TOLL8 PART MARKING 2024/02/06 Ver 6 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION TO220/TO220F/TO252 Pin 1 2 3 PPAK5x6 PIN DESCRIPTION Pin 1~3 4 5~8 TOLL-8 Pin 1 2~8 Tab Symbol G D S Symbol S G D Symbol G S D Description Gate Drain Source Description Source Gate Drain Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN166N06T220TGB TO-220-3L SPN166N06T220FTGB TO-220F-3L SPN166N06T252RGB...