SPN166T06 Description
The SPN166T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
SPN166T06 Key Features
- 60V/166A,RDS(ON)=3.0mΩ@VGS=10V
- Exceptional on-resistance and maximum
- TO-220-3L/TO-220F-3L/PPAK5x6-8L