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SPN2054 - N-Channel MOSFET

General Description

The SPN2054 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 20V/12A,RDS(ON)=40mΩ@VGS=10V.
  • 20V/7A,RDS(ON)=45mΩ@VGS=4.5V.
  • 20V/4A,RDS(ON)=50mΩ@VGS=2.5V.
  • 20V/2A,RDS(ON)=60mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L package design PIN.

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Datasheet Details

Part number SPN2054
Manufacturer SYNC POWER
File Size 303.11 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN2054 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN2054 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2054 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications APPLICATIONS • Power Management in Desktop Computer • DC/DC Converter • LCD Display inverter FEATURES  20V/12A,RDS(ON)=40mΩ@VGS=10V  20V/7A,RDS(ON)=45mΩ@VGS=4.5V  20V/4A,RDS(ON)=50mΩ@VGS=2.5V  20V/2A,RDS(ON)=60mΩ@VGS=1.