SPN230N06 Description
The SPN230N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
SPN230N06 Key Features
- 60V/190A, RDS(ON)=3.0mΩ@VGS=10V
- High density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current
- TO-220 package design