SPN230T06 - N-Channel MOSFET

SYNC POWER

General Description

The SPN230T06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

60V/230A, RDS(ON)=2.5mΩ@VGS=10V.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
TO-220-3L and TO-263-2L package design PIN.

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SPN230T06 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN230T06
Manufacturer	SYNC POWER
File Size	471.62 KB
Description	N-Channel MOSFET
Datasheet	SPN230T06 Datasheet

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Full PDF Text Transcription (Reference)

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SPN230T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN230T06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  AC/DC Synchronous Rectifier  Load Switch  UPS  Power Tool  Motor Control FEATURES  60V/230A, RDS(ON)=2.