SPN28N65 Description
The SPN28N65 is the N-Channel enhancement mode power field effect transistor which is fabricated using an advanced high voltage super junction MOSFET process which delivers high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs....
SPN28N65 Key Features
- 650V/16A, RDS(ON)=280mΩ@VGS=10V
- High density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- Low Crss & gate charge
- Fast switching
- TO-252/TO-220/TO-220F/TO263-2 package design