SPN2N7002K Description
The SPN2N7002K is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA.
SPN2N7002K Key Features
- 60V/0.50A , RDS(ON)= 2.0Ω@VGS=10V
- 60V/0.20A , RDS(ON)= 4.0Ω@VGS= 4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23 package design