SPN3055 - N-Channel MOSFET

SYNC POWER

General Description

The SPN3055 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

30V/12A,RDS(ON)=60mΩ@VGS=10V.
30V/6A,RDS(ON)=90mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
TO-252-2L package design PIN.

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SPN3055 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN3055
Manufacturer	SYNC POWER
File Size	545.55 KB
Description	N-Channel MOSFET
Datasheet	SPN3055 Datasheet

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Full PDF Text Transcription (Reference)

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SPN3055 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3055 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications APPLICATIONS  Power Management in Desktop Computer  DC/DC Converter  LCD Display inverter FEATURES  30V/12A,RDS(ON)=60mΩ@VGS=10V  30V/6A,RDS(ON)=90mΩ@VGS=4.