SPN30T10 - N-Channel MOSFET

SYNC POWER

General Description

The SPN30T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Key Features

100V/20A,RDS(ON)=45mΩ@VGS=10V.
100V/15A,RDS(ON)=50mΩ@VGS=4.5V.
High density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
TO-252-2L/PPAK5x6-8L package design PIN.

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SPN30T10 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN30T10
Manufacturer	SYNC POWER
File Size	380.11 KB
Description	N-Channel MOSFET
Datasheet	SPN30T10 Datasheet

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SPN30T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN30T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Small Power System  DC/DC Converter  Load Switch FEATURES  100V/20A,RDS(ON)=45mΩ@VGS=10V  100V/15A,RDS(ON)=50mΩ@VGS=4.