SPN30T25 Description
The SPN30T25 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN30T25 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
SPN30T25 Key Features
- 250V/29A,RDS(ON)=64mΩ@VGS=10V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- TO-220-3L/TO-252-2L/PPAK5x6-8L