SPN30T25 - N-Channel MOSFET

SYNC POWER

General Description

The SPN30T25 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Key Features

250V/29A,RDS(ON)=64mΩ@VGS=10V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
TO-220-3L/TO-252-2L/PPAK5x6-8L package design PIN.

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SPN30T25 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN30T25
Manufacturer	SYNC POWER
File Size	472.55 KB
Description	N-Channel MOSFET
Datasheet	SPN30T25 Datasheet

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SPN30T25 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN30T25 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN30T25 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.