SPN3632 Datasheet | SYNC POWER

DESCRIPTION The SPN3632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . FEATURES - 100V/80A,RDS(ON)=8.8mΩ@VGS=10V - 100V/30A,RDS(ON)=13mΩ@VGS=6.0V - 100V/10A,RDS(ON)=10mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - TO-220-3L package design APPLICATIONS - DC/DC Converter - Load Switch - SMPS Secondary Side Synchronous Rectifier PIN CONFIGURATION( TO-220-3L ) PART MARKING 2020/05/13 Ver.3 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN3632T220TGB TO-220-3L ※ SPN3632T220TGB: Tube ; Pb - Free; Halogen - Free Part Marking SPN3632 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate - Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Avalanche...