SPN4392 Datasheet | SYNC POWER

DESCRIPTION The SPN4392 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features ‹ 30V/22A,RDS(ON)= 8mΩ@VGS=10V ‹ 30V/18A,RDS(ON)= 12mΩ@VGS=4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP - 8P package design PIN CONFIGURATION(SOP - 8P) PART MARKING 2007/07/20 Ver.1 Page 1 .. N-Channel Enhancement Mode MOSFET Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain PIN DESCRIPTION ORDERING INFORMATION Part Number SPN4392S8RG SPN4392S8TG ※ SPN4392S8RG : 13” Tape Reel ; Pb - Free ※ SPN4392S8TG : Tube ; Pb - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate - Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 30 ±20 Unit Package SOP- 8P SOP- 8P Part Marking SPN4392 SPN4392 V V A A A W ℃ ℃ ℃/W 22 18 50 5.6 2.5 1.6 -55/150 -55/150 80 2007/07/20 Ver.1 Page 2 .. N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time...