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SPN4402W - N-Channel MOSFET

General Description

The SPN4402W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 30V/12A,RDS(ON)=15mΩ@VGS=10V.
  • 30V/10A,RDS(ON)=18mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design.

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Datasheet Details

Part number SPN4402W
Manufacturer SYNC POWER
File Size 477.94 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN4402W Datasheet

Full PDF Text Transcription for SPN4402W (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPN4402W. For precise diagrams, and layout, please refer to the original PDF.

SPN4402W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4402W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell de...

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nt mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  30V/12A,RDS(ON)=15mΩ@VGS=10V  30V/10A,RDS(ON)=18mΩ@VGS=4.

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