SPN4426 Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4426 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features - 20V/8.0A,RDS(ON)=28mΩ@VGS=4.5V - 20V/7.0A,RDS(ON)=38mΩ@VGS=2.5V - 20V/3.0A,RDS(ON)=42mΩ@VGS=1.8V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOP- 8 package design APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter PIN CONFIGURATION(SOP- 8) 2020/03/05 Ver.3 PART MARKING Page N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN4426S8RGB...