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SPN4526W - N-Channel MOSFET

General Description

The SPN4526 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • ‹ 40V/10A,RDS(ON)= 25mΩ@VGS= 10V ‹ 40V/ 8A,RDS(ON)= 30mΩ@VGS= 4.5V ‹ 40V/ 6A,RDS(ON)= 36mΩ@VGS= 2.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP.
  • 8P package design.

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Datasheet Details

Part number SPN4526W
Manufacturer SYNC POWER
File Size 192.44 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN4526W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN4526W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4526 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ 40V/10A,RDS(ON)= 25mΩ@VGS= 10V ‹ 40V/ 8A,RDS(ON)= 30mΩ@VGS= 4.5V ‹ 40V/ 6A,RDS(ON)= 36mΩ@VGS= 2.