SPN4814A Description
The SPN4814A is the N-Channel enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching.
SPN4814A Key Features
- 100V/20A,RDS(ON)=10.5mΩ@VGS=10V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOP-8 package design