SPN4842 Description
The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching.
SPN4842 Key Features
- 45V/6A,RDS(ON)=9.5mΩ@VGS=10V
- 45V/3A,RDS(ON)=12.5mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOP-8 package design