SPN4856 Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching is required. APPLICATIONS - DC/DC Converter - Load Switch - Synchronous Buck Converter - Charger Adapter - LED Lighting Features - 40V/8A,RDS(ON)=9mΩ@VGS=10V - 40V/4A,RDS(ON)=13.5mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) -...