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SPN4856 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: SYNC POWER

Overview: SPN4856 N-Channel Enhancement Mode MOSFET.

Datasheet Details

Part number SPN4856
Manufacturer SYNC POWER
File Size 333.79 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet SPN4856-SYNCPOWER.pdf

General Description

The SPN4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching is required.

Key Features

  • 40V/8A,RDS(ON)=9mΩ@VGS=10V.
  • 40V/4A,RDS(ON)=13.5mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design PIN.

SPN4856 Distributor & Price

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