SPN4856 Overview
The SPN4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching is required.
SPN4856 Key Features
- 40V/8A,RDS(ON)=9mΩ@VGS=10V
- 40V/4A,RDS(ON)=13.5mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOP-8 package design