SPN4868 Datasheet | SYNC POWER

DESCRIPTION The SPN4868 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high efficiency and fast switching is required. FEATURES - 60V/6A,RDS(ON)=21mΩ@VGS=10V - 60V/4A,RDS(ON)=24mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOP-8 package design APPLICATIONS - Motor Drive - Power Tools - LED Lighting PIN CONFIGURATION (SOP- 8) PART MARKING 2020/03/26 Ver 2 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D ORDERING INFORMATION Part Number Package SPN4868S8RGB SOP-8 ※ SPN4868S8RGB : 13” Tape Reel ; Pb - Free; Halogen - Free Description Source Source Source Gate Drain Drain Drain Drain Part Marking SPN4868 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate - Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TC=25℃ TC=100℃ Continuous Source Current(Diode Conduction) Power...