SPN55T20 Description
The SPN55T20 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching.
SPN55T20 Key Features
- 200V/42A,RDS(ON)=32mΩ@VGS=10V
- Super high density cell design for extremely low RDS
- Exceptional on-resistance and maximum DC current capability
- TO-220-3L/TO-252-2L/PPAK5x6-8L package design