Datasheet Summary
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN6099 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching .
Features
- 60V/80A,RDS(ON)= 4.0mΩ@VGS= 10V
- 60V/40A,RDS(ON)= 4.2mΩ@VGS= 6.0V
- 60V/10A,RDS(ON)= 4.4mΩ@VGS= 4.5V
- Super high density cell design for extremely low
RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- TO-220-3L...