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SPN60N10 - N-Channel MOSFET

Description

The SPN60N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 100V/63A,RDS(ON)=20mΩ@VGS=10V.
  • 100V/63A,RDS(ON)=25mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-220F-3L/TO-263-2L/TO-252-2L package design PIN.

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Datasheet preview – SPN60N10

Datasheet Details

Part number SPN60N10
Manufacturer SYNC POWER
File Size 419.79 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN60N10 Datasheet
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SPN60N10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN60N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control FEATURES  100V/63A,RDS(ON)=20mΩ@VGS=10V  100V/63A,RDS(ON)=25mΩ@VGS=4.
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