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SPN6435
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN6435 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc. High saturation current capability.
SPN6435 Datasheet
