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SPN6562 - Dual N-Channel MOSFET

Description

The SPN6562 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • N-Channel 30V/2.8A,RDS(ON)=65mΩ@VGS=10V 30V/2.3A,RDS(ON)=75mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=105mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design PIN.

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Datasheet Details

Part number SPN6562
Manufacturer SYNC POWER
File Size 337.63 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SPN6562 Datasheet

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Full PDF Text Transcription

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SPN6562 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6562 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  N-Channel 30V/2.8A,RDS(ON)=65mΩ@VGS=10V 30V/2.
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