SPN65T25 Description
The SPN65T25 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
SPN65T25 Key Features
- 250V/90A, RDS(ON)=22mΩ@VGS=10V
- High density cell design for extremely low RDS
- Exceptional on-resistance and maximum DC current
- TO-220-3L/TO-220F-3L/TO-263-2L package design