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SPN7002V - N-Channel MOSFET

Datasheet Summary

Description

The SPN7002V is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Features

  • 60V/0.50A , RDS(ON)=4.0Ω@VGS=10V.
  • 60V/0.30A , RDS(ON)=5.0Ω@VGS=5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-523 (SC-89) package design PIN.

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Datasheet preview – SPN7002V

Datasheet Details

Part number SPN7002V
Manufacturer SYNC POWER
File Size 424.04 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN7002V Datasheet
Additional preview pages of the SPN7002V datasheet.

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Full PDF Text Transcription

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SPN7002V N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7002V is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 300mA DC and can deliver pulsed currents up to 1.0A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.  High saturation current capability.
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