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SPN7002T - Dual N-Channel MOSFET

Datasheet Summary

Description

The SPN7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Features

  • 60V/0.50A , RDS(ON)=2.0Ω@VGS=10V.
  • 60V/0.20A , RDS(ON)=4.0Ω@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • ESD protected.
  • SOT-363 package design PIN.

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Datasheet preview – SPN7002T

Datasheet Details

Part number SPN7002T
Manufacturer SYNC POWER
File Size 361.43 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SPN7002T Datasheet
Additional preview pages of the SPN7002T datasheet.

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Full PDF Text Transcription

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SPN7002T Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. APPLICATIONS  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.  High saturation current capability.
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