SPN7510 Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7510 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features ‹ 100V/30A,RDS(ON)= 16mΩ@VGS= 10V ‹ 100V/16A,RDS(ON)= 21mΩ@VGS= 4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TO-220-3L package design APPLICATIONS z DC/DC Converter z Load Switch SMPS Secondary Side Synchronous Rectifier z PIN CONFIGURATION( TO-220-3L ) .. PART MARKING 2009/06/15 Ver.1 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number SPN7510T220TGB Package TO-220-3L Part Marking SPN7510 ※ SPN7510T220TGB : Tube ; Pb - Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter .. Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM TA=25℃ TA=70℃ PD EAS TJ TSTG RθJA Typical 100 ±20 Unit Drain-Source Voltage Gate - Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Power Dissipation V V A A W m J 72 45 240 130 3.38 Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.12m H , IAS = 75A , VDD = 80V. ) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient -55/150 -55/150 2 ℃ ℃ ℃/W 2009/06/15...