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SPN7510 - N-Channel MOSFET

Datasheet Summary

Description

The SPN7510 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • ‹ 100V/30A,RDS(ON)= 16mΩ@VGS= 10V ‹ 100V/16A,RDS(ON)= 21mΩ@VGS= 4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TO-220-3L package design.

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Datasheet Details

Part number SPN7510
Manufacturer SYNC POWER
File Size 185.13 KB
Description N-Channel MOSFET
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SPN7510 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7510 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ 100V/30A,RDS(ON)= 16mΩ@VGS= 10V ‹ 100V/16A,RDS(ON)= 21mΩ@VGS= 4.
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