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SPN75T10 - N-Channel MOSFET

Datasheet Summary

Description

The SPN75T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 100V/80A,RDS(ON)=9.2mΩ@VGS=10V.
  • 100V/80A,RDS(ON)=14mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-220F-3L/TO-252-2L/PPAK5x6-8L package design.

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Datasheet preview – SPN75T10

Datasheet Details

Part number SPN75T10
Manufacturer SYNC POWER
File Size 464.26 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN75T10 Datasheet
Additional preview pages of the SPN75T10 datasheet.

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Full PDF Text Transcription

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SPN75T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN75T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. FEATURES  100V/80A,RDS(ON)=9.2mΩ@VGS=10V  100V/80A,RDS(ON)=14mΩ@VGS=4.
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