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SPN80T06 - N-Channel MOSFET

General Description

The SPN80T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 60V/80A, RDS(ON)=9mΩ@VGS=10V 60V/80A, RDS(ON)=13mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/PPAK5x6-8L/TO-252-2L package design PIN.

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Datasheet Details

Part number SPN80T06
Manufacturer SYNC POWER
File Size 438.70 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN80T06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN80T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN80T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  60V/80A, RDS(ON)=9mΩ@VGS=10V 60V/80A, RDS(ON)=13mΩ@VGS=4.