SPN8457 Description
The SPN8457 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are...
SPN8457 Key Features
- 30V/5.5A,RDS(ON)=58mΩ@VGS=10V
- 30V/4.0A,RDS(ON)=98mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-223 package design
SPN8457 Applications
- Power Management in Note book