SPN8457 Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8457 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS - Power Management in Note book - DC/DC Converter - LCD Display inverter Features - 30V/5.5A,RDS(ON)=58mΩ@VGS=10V - 30V/4.0A,RDS(ON)=98mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-223 package design PIN CONFIGURATION(SOT-223) PART MARKING 2022/09/01 Ver.4 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN8457S22RGB SOT-223 ※ SPN8457S22RGB : Tape Reel ; Pb - Free ; Halogen - Free Part Marking...