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SPN8460 - N-Channel MOSFET

General Description

The SPN8460 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 60V/2.5A,RDS(ON)=120mΩ@VGS=10V.
  • 60V/2.0A,RDS(ON)=130mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-223 package design PIN.

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Datasheet Details

Part number SPN8460
Manufacturer SYNC POWER
File Size 338.99 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN8460 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN8460 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8460 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a small outline surface mount package. APPLICATIONS  Power Tool  DC/DC Converter  Load Switch FEATURES  60V/2.5A,RDS(ON)=120mΩ@VGS=10V  60V/2.0A,RDS(ON)=130mΩ@VGS=4.