SPN8460 Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8460 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a small outline surface mount package. APPLICATIONS - Power Tool - DC/DC Converter - Load Switch Features - 60V/2.5A,RDS(ON)=120mΩ@VGS=10V - 60V/2.0A,RDS(ON)=130mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-223 package design PIN CONFIGURATION(SOT-223) PART MARKING 2022/09/01 Ver.4 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN8460S22RGB SOT-223 ※ SPN8460S22RGB : Tape Reel ; Pb - Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise...