SPN8618 Overview
The SPN8618 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8618 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
SPN8618 Key Features
- 100V/10A, RDS(ON)=112mΩ@VGS=10V
- 100V/10A, RDS(ON)=130mΩ@VGS=4.5V
- High density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current
- PPAK3x3-8L package design