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SPN8632 - N-Channel MOSFET

Datasheet Summary

Description

The SPN8632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 30V/96A,RDS(ON)=4.2mΩ@VGS=10V.
  • 30V/96A,RDS(ON)=6mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • PPAK3x3-8L package design.

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Datasheet Details

Part number SPN8632
Manufacturer SYNC POWER
File Size 533.71 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN8632 Datasheet
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SPN8632 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  30V/96A,RDS(ON)=4.2mΩ@VGS=10V  30V/96A,RDS(ON)=6mΩ@VGS=4.
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