SPN8632 Datasheet | SYNC POWER

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . Features - 30V/96A,RDS(ON)=4.2mΩ@VGS=10V - 30V/96A,RDS(ON)=6mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - PPAK3x3-8L package design APPLICATIONS - MB/VGA/Vcore -...