SPN8668 Overview
The SPN8668 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high efficiency and fast switching is required.
SPN8668 Key Features
- 60V/80A,RDS(ON)=21mΩ@VGS=10V
- 60V/80A,RDS(ON)=24mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC current
- PPAK3x3-8L package design