SPN8822 Description
The SPN8822 is the mon-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching.
SPN8822 Key Features
- 20V/8.0A,RDS(ON)=24mΩ@VGS=4.5V
- 20V/7.0A,RDS(ON)=32mΩ@VGS=2.5V
- 20V/3.0A,RDS(ON)=42mΩ@VGS=1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- TSSOP-8 package design
SPN8822 Applications
- Power Management in Note book