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SPN8848 - Dual N-Channel Enhancement Mode MOSFET

General Description

The SPN8848 is the Dual N-Channel Enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • 40V/10A, RDS(ON )= 8.5mΩ@VGS=10V.
  • 40V/8.0A, RDS(ON)=12mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • PPAK5x6-8L package design PIN.

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Datasheet Details

Part number SPN8848
Manufacturer SYNC POWER
File Size 305.07 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN8848 Datasheet

Full PDF Text Transcription for SPN8848 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPN8848. For precise diagrams, and layout, please refer to the original PDF.

SPN8848 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8848 is the Dual N-Channel Enhancement mode power field effect transistors are produced using high cell ...

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ment mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. APPLICATIONS  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch FEATURES  40V/10A, RDS(ON )= 8.5mΩ@VGS=10V  40V/8.0A, RDS(ON)=12mΩ@VGS=4.

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