SPN8882 - N-Channel MOSFET

SYNC POWER

General Description

The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Key Features

30V/40A,RDS(ON)=10mΩ@VGS=10V.
30V/40A,RDS(ON)=14mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
TO-252-2L/TO-251S-3L package design PIN.

📥 Download Datasheet

SPN8882 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN8882
Manufacturer	SYNC POWER
File Size	356.78 KB
Description	N-Channel MOSFET
Datasheet	SPN8882 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SPN80800R9NETN	Coating Inductors	DARFON
SPN8080100METL	Coating Inductors	DARFON
SPN8080100METN	Coating Inductors	DARFON
SPN8080101METN	Coating Inductors	DARFON
SPN8080150METL	Coating Inductors	DARFON

Other Datasheets by SYNC POWER

Part Number	Description
SPN8810	N-Channel MOSFET
SPN8812	N-Channel MOSFET
SPN8822	Dual N-Channel MOSFET
SPN8822A	Dual N-Channel MOSFET
SPN8830	N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Power Management in Note book  Powered System  DC/DC Converter  Load Switch FEATURES  30V/40A,RDS(ON)=10mΩ@VGS=10V  30V/40A,RDS(ON)=14mΩ@VGS=4.